[Lecture] Epitaxy at weakly-coupled interface

2019-12-11

Title: Epitaxy at weakly-coupled interface
Speaker: Dr. Jian Shi,Rensselaer Polytechnic Institute
Venue: Meeting Room 205, Building No.14, Wushan Campus
Time: December 16, Monday, 15:00-17:00

Abstract:
Dimensionality effect has been found interesting in exploring new physics and effective in engineering materials’ physical properties. However, often intrinsic material behaviors are clouded by the underlying support through strongly-coupled interface. In this talk, I will show our efforts and discovery on developing weakly-coupled epitaxial interface for semiconducting halides. I will present the serendipity and challenges while working on complex oxide interfaces.

Biography:
Dr. Jian Shi is an Associate Professor in the Department of Materials Science and Engineering at Rensselaer Polytechnic Institute. Prior to this appointment, Dr. Shi was a postdoctoral research fellow at Harvard University from 2013 to 2014. He received his Ph.D. degree in Materials Science at the University of Wisconsin at Madison in 2012, his M.S. degree in Mechanical Engineering at the University of Missouri at Columbia in 2008 and his B.S. degree in Materials Science and Engineering at Xi’an Jiaotong University in 2006. Dr. Shi is a recipient of 2018 Rensselaer Polytechnic Institute School of Engineering Research Excellence Award. Dr. Shi also received Air Force Office of Scientific Research (AFOSR) Young Investigator Research Program (YIP) Award in Oct 2017. Dr. Shi is an Early Career Member in the Editorial Advisory Board of Journal of Applied Physics. His current research focuses on the growth and study of the physical properties of semiconducting and phase transition materials.


Announced by the School of Materials Science and Engineering


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